X-ray diffraction studies of selective area grown InGaN/GaN multiple quantum wells on multi-facet GaN ridges
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چکیده
p s s current topics in solid state physics
منابع مشابه
InGaN multiple quantum wells grown on ELO GaN templates and the optical properties characterization
Epitaxial lateral overgrowth of gallium nitride with 1 1 2̄ 2 facets was realized by metal organic chemical vapor deposition on GaN/ sapphire (0 0 0 1) substrates with SiO2 stripe mask. After wet etching of the mask, periodic multiple quantum wells (MQWs) InGaN/GaN structures were grown on the whole surface. Cross-sectional transmission electron microscopy (TEM) showed that a higher growth rate ...
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Uniform GaN nanorod arrays are grown vertically by selective area growth on (left angle bracket 0001 right angle bracket) substrates. The GaN nanorods present six nonpolar {1⁻100} facets, which serve as growth surfaces for InGaN-based light-emitting diode quantum well active regions. Compared to growth on the polar {0001} plane, the piezoelectric fields in the multiple quantum wells (MQWs) can ...
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A metalorganic vapor phase epitaxy-grown InGaN/GaN multiple-quantum-well (MQW) with three graded-thickness wells (the first-grown well had the greatest width) near the n-GaN was used as the active layer of an LED. For LEDs with an asymmetric quantum well (AQW), high-resolution X-ray diffraction and transmission electron microscopic reveal that the modified MQWs with a reasonable crystalline qua...
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Hybrid green light-emitting diodes (LEDs) comprised of n-ZnO/(InGaN/GaN) multi-quantum-wells/p-GaN were grown on semi-insulating AlN/sapphire using pulsed laser deposition for the n-ZnO and metal organic chemical vapor deposition for the other layers. X-ray diffraction revealed that high crystallographic quality was preserved after the nZnO growth. LEDs showed a turn-on voltage of 2.5 V and a r...
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Submicron spatial resolution photoluminescence is used to assess radiative efficiency and spatial uniformity of GaN/InGaN heterojunctions. Room temperature photoluminescence of multiple InGaN quantum wells with GaN barriers fabricated by electron-cyclotron resonance assisted molecular beam epitaxy was measured as a function of position on a facet perpendicular to the layer structure. Our high r...
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تاریخ انتشار 2008